ME4413D / ME4413D-G,P溝道增強(qiáng)模式MOSFET,ESD保護(hù)
ME4413D-G一般說明:
ME4413D是使用高單元密度DMOS溝槽技術(shù)生產(chǎn)的P通道邏輯增強(qiáng)模式功率場(chǎng)效應(yīng)晶體管。 這種高密度該工藝經(jīng)過特別設(shè)計(jì),可最大程度地降低導(dǎo)通電阻。 這些設(shè)備特別適合于低電壓應(yīng)用,例如手機(jī)和筆記本電腦計(jì)算機(jī)電源管理和其他電池供電的電路,它們需要使用非常小的外形表面安裝封裝來實(shí)現(xiàn)低的在線功率損耗。
ME4413D-G特征:
RDS(ON)≤13mΩ@VGS=-4.5V
RDS(ON)≦17mΩ@VGS=-2.5V
RDS(ON)≦26mΩ@VGS=-1.8V
超高密度電池設(shè)計(jì),可實(shí)現(xiàn)極低的RDS(ON)
靜電防護(hù)
ME4413D-G應(yīng)用領(lǐng)域:
筆記本中的電源管理
便攜式設(shè)備
電池供電系統(tǒng)
ME4413D/ME4413D,P-Channel Enhancement Mode Mosfet , ESD Protection
GENERAL DESCRIPTION
The ME4413D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.
FEATURES
RDS(ON) ≦13m?@VGS=-4.5V
RDS(ON) ≦17m?@VGS=-2.5V
RDS(ON) ≦26m?@VGS=-1.8V
Super high density cell design for extremely low RDS(ON)
ESD protection
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System