描述
WMOSTM DM是硅N溝道增強(qiáng)型VDMOSFET,采用自對(duì)準(zhǔn)平面技術(shù)獲得,可降低導(dǎo)通損耗,提高開(kāi)關(guān)性能,增強(qiáng)雪崩能量。 該晶體管可用于各種功率開(kāi)關(guān)電路,以實(shí)現(xiàn)系統(tǒng)小型化和更高效率。
特征
快速切換
典型。 RDS(on) =2.3Ω
低柵極電荷(典型值 Qg = 12.5C)
典型。 Crss = 4.1pF
100% UIS 測(cè)試
應(yīng)用
LED照明、充電器、適配器、PC、液晶電視、服務(wù)器
Part Package Marking Packing method
WML04N65DM TO-220F WML04N65DM Tube
WMN04N65DM TO-262 WMN04N65DM Tube
WMO04N65DM TO-252 WMO04N65DM Tape and Reel
WMP04N65DM TO-251 WMP04N65DM Tube
WMH04N65DM TO-251S2 WMH04N65DM Tube
WMG04N65DM TO-251S3 WMG04N65DM Tube
Description
WMOSTM DM, the silicon N-channel enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Features
Fast Switching
Typ. RDS(on) =2.3Ω
Low Gate Charge (Typ. Qg = 12.5C)
Typ. Crss = 4.1pF
100% UIS Tested
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server